Abstract
Results of studying volt-ampere characteristics of switching avalanche S-diodes are presented. It is shown that, for S-diodes based on structures obtained by diffusing Cr into GaAs, a larger part of the applied reverse-biased voltage drops across a high-resistance π-region but not across the space-charge region. In this case, the sharp increase of the current is caused by the electron injection from the forward-biased contact to the π-layer. In this respect, a new GaAs-based structure doped with Cr and Fe (GaAs:Cr, Fe) is studied. It is shown that, in S-diodes based on (GaAs:Cr, Fe)-structures, the current increase under a reverse bias is caused by avalanche processes in the space-charge area. This leads to producing a negative differential resistance section with subnanosecond switching from the closed to open state. The switching voltages of S-diodes on GaAs:Cr, Fe structures vary from 350 to 650 V, and the switching times do not exceed 0.5 ns.
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