Abstract
We discuss circuit parameters that limit the precision of basic dynamic current-memory cells. In addition to analyzing current-copying errors caused by the finite output conductances of the current sources and by the clock-feedthrough (CFT) of the feedback switches, we analyze the noise performance of the basic memory cell. To reduce CFT and noise, we propose a novel circuit based on Miller capacitance-enhancement. Measurement results of memory cells integrated in a 1-/spl mu/m CMOS process confirm the theoretical findings; with our CFT and noise reduction technique based on Miller enhanced capacitance and dummy switches, we achieve a dynamic range of 11 b at clock frequencies greater than 100 kHz. >
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