Abstract

Detectors for the short-wave infrared (SWIR) spectral range are particularly suitable for observation under hazy weather conditions as well as under twilight or moon light conditions. In addition, SWIR detectors allow using the airglow for observation under moonless sky. SWIR detectors are commonly based on InGaAs or HgCdTe (MCT) and demand extremely low dark currents to ensure a high signal-to-noise ratio under low background light conditions. AIM has developed a read-out integrated circuit (ROIC) with 640×512 pixels and a 15 μm pixel pitch for low light level applications. The ROIC supports analog or digital correlated double sampling (CDS) for the reduction of reset-noise (also known as kTC-noise). Along with CDS, a rolling shutter (RS) mode has been implemented. The input stage of the ROIC is based on a capacitive transimpedance amplifier (CTIA) with two selectable gain settings. The dark current of our SWIR MCT detectors has recently been significantly reduced to allow for high operating temperatures. In contrast to InGaAs, the MCT material offers the unique possibility to adjust the cut-off wavelength according to the application while maintaining the matching of the lattice constant to the one of the CdZnTe substrate. The key electro-optical performance parameters of lately developed MCT based SWIR Focal Plane Arrays (FPA) with a 1.75 μm cut-off wavelength will be presented. In addition, AIMs SWIR detectors covering the spectral range from 0.9 μm to 2.5 μm and available in formats of 384×288 pixels - 24 μm pitch and 1024×256 pixels - 24×32 μm2, will be introduced.

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