Abstract
of Undoped and Cd-Doped ZnO Films D.V. Myroniuk, G.V. Lashkarev, I.I. Shtepliuk, V.A. Skuratov, A. Reszka and B.J. Kowalski Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 3 Krzhizhanovsky str., 03680 Kyiv, Ukraine Joint Institute for Nuclear Research, Joliot-Curie 6, 141980, Dubna, Moscow region, Russia Institute of Physics, PAS, al. Lotnikow 32/46, 02-668 Warszawa, Poland Here we report the e ect of the irradiation by 167 MeV Xe ions (in the uence range up to 3×10 ions/cm) on the undoped and Cd-doped (0.4, 0.5 at.%) ZnO lms deposited by radiofrequency magnetron sputtering. As-grown and irradiated samples were investigated by cathodoluminescence spectroscopy. It was found that the radiation causes a decrease in intensity of luminescent peaks and a redistribution of the radiative recombination channels. We revealed that the cadmium incorporation into ZnO lattice enhances the radiation resistance of ZnO lm.
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