SWIFT: Switch-Level Fault Simulation on GPUs

Abstract

Current nanometer CMOS circuits show an increasing sensitivity to deviations in first-order parameters and suffer from process variations during manufacturing. To properly assess and support test validation of digital designs, low-level fault simulation approaches are utilized to accurately capture the behavior of CMOS cells under parametric faults and process variations as early as possible throughout the design phase. However, low-level simulation approaches exhibit a high computational complexity, especially when variation has to be taken into account. In this paper, a high-throughput parallel fault simulation at switch level is presented. First-order electrical parameters are utilized to capture CMOS-specific functional and timing behavior of complex cells allowing to model faults with transistor granularity and without the need of logic abstraction. Furthermore, variation modeling in cells and transistor devices enables broad and efficient variation analyses of faults over many circuit instances for the first time. The simulation approach utilizes massive parallelization on graphics processing units by exploiting parallelism from cells, stimuli, faults, and circuit instances. Despite the lower abstraction levels of the approach, it processes designs with millions of gates and outperforms conventional fault simulation at logic level in terms of speed and accuracy.