Abstract
In this work, degradation of the electrical characteristics of 65nm nMOSFETs under swift heavy ion irradiation is investigated. It was found that a heavy ion can generate a localized region of physical damage (ion latent track) in the gate oxide. This is the likely cause for the increased gate leakage current and soft breakdown (SBD) then hard breakdown (HBD) of the gate oxide. Except in the case of HBD, the devices retain their functionality but with degraded transconductance. The degraded gate oxide exhibits early breakdown behavior compatible with the model of defect generation and percolation path formation in the percolation model.
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