Abstract
The influence of swift heavy ion (SHI) irradiation on transport properties of epitaxial thin films of La0.75Ca0.25MnO3 (LCMO) is studied. The films were irradiated with 90 MeV16O beams and 250 MeV107 Ag beams at different fluence values. In the case of 90 MeV16O ions LCMO specimens were irradiated to 1011-1014 ions/cm2 and for 250 MeV107Ag ions with 1010–1013 ions/cm2. A systematic variation in Curie temperature (T c) or resistivity peak temperature (T p) has been observed. It has been noted that for both types of ions the T p increased for the specimen irradiated at 1011 ions/cm2 fluence. Further increase of fluence decreased the T p value and at higher fluence (1014 ions/cm2 for 90 MeV16O and 1013 ions/cm2 for 250 MeV107 Ag ions) the specimens showed no metal-to-insulator transition even at low temperature down to 77K. They show completely semiconducting behavior with high resistance values. These results are discussed in terms of SHI irradiation-induced structural distrotion and strain on thin films.
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