Swift heavy ion induced modifications of silicon (sub) oxide nitride layer structures

Abstract

Irradiation of a bilayer consisting of a deuterated silicon nitride and a silicon sub-oxide film with heavy ions in the electronic stopping regime results in incorporation of nitrogen and deuterium in the sub-oxides. This experimental observation is discussed within the model, originally established to understand the loss of hydrogen from hydrogenated organic and inorganic materials. This and other reported observations of transport within the bilayer emphasize the role of trapping and permeation in the model.