Abstract
Direct growth of a suspended single nanostructure (SSN) at a specific location is presented.The SSN is grown across a metallic nanoscale gap by migration in air at room temperature.The nanogap is fabricated by industrial standard optical lithography and anisotropic wetchemical silicon etching. A DC current bias, 1 nA, is applied across the metallic gap toinduce nanoscale migration of Zn or ZnO. The history of the voltage drop across the gap asa function of time clearly indicates the moment when migration begins. The shape of SSNsgrown across the nanogap by the migration is asymmetric at each electrode due tothe asymmetric electric field distribution within the nanogap. An SSN can beused as the platform for two-terminal active or passive nanoscale electronics inoptoelectronics, radio frequency (RF) resonators, and chemical/biological sensors.
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