Abstract
Growth of Ge/Si follows the Stranski–Krastanov growth mode (2D→3D) because of the 4.2% lattice mismatch between Ge and Si. However, the growth mode can be altered to Frank–Van der Merwe (layer-by-layer) by depositing a suitable surfactant. In this study, we have grown thin and thick Ge(0 0 1)/Si(0 0 1) MBE layers with and without As deposition prior to Ge growth in order to investigate the details of surfactant-mediated epitaxy. Raman spectroscopy shows that without As surfactant use, Ge and Si interdiffuse at the interface and form an alloy. Furthermore, peak shift measurements as well as cross-sectional electron micrographs reveal that layers grown with As slowly relieve misfit strain through the accommodation of Lomer edge dislocations at the interface leaving a relaxed, nearly defect-free layer.
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