Abstract
ABSTRACTWe have chosen Bi as the surfactant atom in the heteroepitaxial growth of Co on Au(111). It was found that Bi induces layer-by-layer (LBL) growth at room temperature. With pre-deposition of 0.2 ∼ 0.8Å Bi on Au(111) prior to the evaporation of Co, more long-lasting RHEED intensity oscillations were observed and this implies that it induces the LBL growth of Co film. The result of the dependence of the growth behavior as a function of Bi layer thickness suggests that there is a suitable amount of Bi surfactant layer that induces the smoother LBL growth. A surface segregation of Bi was found at the top of surface and acts as a surfactant by promoting the interlayer transport.
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