Abstract
Abstract In this work, we report on the electrodeposition of CuInSe2 (CIS) thin films with In2Se3 rich surface by a single step deposition technique. It was observed that the In-content deposited in CIS can be improved by the addition of sodium dodecyl sulfate as a surfactant. The presence of an In–Se rich layer was confirmed by electrochemical, compositional and Raman spectroscopy analysis. The photo-electrochemical properties of the as-deposited CuInSe2 thin films were found to be enhanced due to the presence of In–Se rich superficial layer. The presence of an In–Se layer over CIS may act as a p-n homo-junction which may be attributed as the primary reason for the improvement in the PEC properties.
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