Surface‐Supported Metal‐Organic Framework as Low‐Dielectric‐Constant Thin Films for Novel Hybrid Electronics

Abstract

AbstractThe miniaturization of electronic devices highlights the need for robust low‐κ materials as an alternative to prevent losses in the performance of integrated circuits. For it, surface‐supported metal‐organic frameworks (SURMOFs), a class of porous‐hybrid materials, may cover such a demand. However, the high‐intrinsic porosity makes determining the dielectric properties difficult and promotes the integration of SURMOF thin films. Here, the integration of ultrathin HKUST‐1 SURMOF films into a 3D functional device architecture using soft‐top electrical contacts is addressed. In this novel approach, the device structure assumes an ultracompact capacitor structure allowing determine the dielectric properties of porous thin films with considerable accuracy. A low‐κ value of 2.0 ± 0.5 and robust breakdown strength of 2.8 MV cm−1 are obtained for films below 80 nm. The spontaneous self‐encapsulated structure provides a footprint‐area reduction of up to 90% and yields good protection for the SURMOF toward different hazardous exposure. Finite‐element calculations compare the HKUST‐1 performance as dielectric layer with well‐established insulators applied in electronics (SiO2 and Al2O3). The possibility of integration and miniaturization of HKUST‐1, combined with their interesting insulating properties, place this hybrid material as a robust low‐k dielectric for novel electronics.