Abstract
We experimentally studied an impact of the surface oxide layer on quantum confinement effects (QCE) in Si quantum well (SQW) structures (surface-oxide/two-dimensional-Si/buried-oxide) with various surface oxide layer thickness TOX on silicon-on-insulator (SOI) substrate, by UV-Raman spectroscopy, photoluminescence (PL) method, and two-dimensional (2D) stress simulator. UV-Raman data show that tensile strain ε of SQW, stressed by a thermal expansion mismatch between surface oxide and Si layers, decreases with decreasing the TOX. According to the strain behavior in the SQW and strained-Si on strained-SOI, PL results show that bandgap EG of the SQW rapidly expands with decreasing TOX. As a result, we can estimate the EG of the fully relaxed SQW. However, QCE in SQW keep thermally stable, in spite of carrying out a high temperature N2 annealing process.
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