Abstract
Motions of silicon, hydrogen, and deuterium in sputtered thin films of a-Si, a-Si:H, and a-Si:D were studied by measurements of the attenuation of surface acoustic waves propagating along the surface of piezoelectric crystals which were covered by the thin films. It is concluded that there are H and D atoms (ions) which are not directly associated with the Si bonds. Some of the H and D atoms (ions) are configurationally rearranged at room temperature. A part of the hydrogen (deuterium) or argon is located in voids.
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