Abstract
The polymer residue remaining on chemical-vapor-deposited graphene after its transfer to the substrate and subsequent lithographic patterning tends to cause problems such as decrease in electron mobility, and unwanted doping. In this study, by using a controllable low-energy Ar+ ion beam (9.5 eV), the residue was cleaned perfectly without damaging the graphene surface. Further, a back-gate graphene field-effect transistor fabricated on the Ar+-ion-cleaned graphene surface showed about 4 times higher drain current than that showed by a similar transistor fabricated on pristine graphene. We believe that the technique used in this study can be useful in preventing the problems caused by the residue remaining on the graphene surface and can be applied not only to the processing of next-generation graphene-based electronics but also to other 2D materials-based electronic material processing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
