Abstract
We investigated the effect of the atmospheric pressure plasma (APP) and low pressure plasma (LPP) treatments on the performance of organic light emitting diodes (OLED). The increase of surface energy was mainly attributed to polar component and Lewis base interaction, independent of either APP or LPP treatments. O2 LPP-treated surface showed more uniform roughness than Ar/O2 APP-treated surface. All plasma treatments increased the amount of oxygen, which led to the improvement of work function, while decreasing the amount of carbon. All treatments except only Ar APP treatment decreased the amount of dopant-tin. O2 LPP-treated ITO showed the highest value of work function because of the efficient removal of carbon contamination, together with the improvement of In/Sn ratio, and the uniformity of surface roughness. Thus, the organic light-emitting diode fabricated on the surface of O2 LPP-treated ITO substrate exhibited superior brightness.
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