Surface Topography of Si/TiO2 Stacked Layers on Silicon Substrate Deposited by KrF Excimer Laser Ablation

Alin Jderu,Aida Pantazi,Călin Constantin Moise,Mircea Bercu,Marius Enăchescu,Geanina Valentina Mihai,Angelo Alberto Messina

doi:10.3390/coatings11111350

Abstract

This study investigates the surface topography of the deposited thin films versus the distance between target and substrate (dTS) inside a laser ablation equipment. The profile of the rough surface was obtained by atomic force microscopy data analysis based on power spectral density and the roughness-length scale (RLS) functions. The roughing on the top film is analyzed considering the previous topography of the underneath surface for each consecutive TiO2 and Si deposition onto Si (100) wafer. The buried oxide layer inside of Si/TiO2/c-Si structure, obtained by KrF excimer laser ablation was characterized by complementary techniques as spectral ellipsometry, X-ray reflectometry, and X-ray diffraction.

Highlights

The ever-increasing demand for very small devices has led to an important growth of the microelectronics market and, subsequently, research interest
In this work we report the successful deposition of TiO2 thin films with brookite signature by pulsed laser deposition (PLD) on a n-Si (100) wafer, which was annealed at 600 ◦ C in ultra-high vacuum (UHV) and heated during deposition at 500 ◦ C
Two endeavors generated this contribution: PLD deposition of a buried TiO2 layer as a part of Si/TiO2 /c-Si structure, and the application on the Atomic Force Microscopy (AFM) data of an adequate approach to reveal the influence of distance between target and substrate (dTS) deposition parameter on the topography of the films

Summary

Introduction

The ever-increasing demand for very small devices has led to an important growth of the microelectronics market and, subsequently, research interest. The built of an embedded oxide layer by using oxygen ion implantation called Separation by IMplanted Oxygen (SIMOX) [4] and Bond an Etch Silicon on Insulator (BESOI) meaning bond and etch oxidized substrates technology [5] were the main improvements after the 1980s for low power electronic devices. At this stage the Silicon on Insulator (SOI) solution produced standard wafer fabrication with dedicated new equipment [6]

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Results

Conclusion