Abstract
The surface topography during initial and steady state epitaxial growth of InP on InP is monitored with in situ diffuse elastic light scattering. The in situ results are compared with the end-of-run topography measured by ex situ atomic force microscopy. Upon growth initiation, an increase in surface roughness is observed with steps oriented perpendicular to the [011] and [010] direction. After several nanometers of InP deposition, the surface topography planarizes and steady state step-flow epitaxy develops with steps aligned to the pregrowth terrace.
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