Abstract
In this study present the effect of soft radiation flash exposure (SRFE) to forward bias current-voltage (I-V) of PN diode by using COMSOL simulation program. The results show surface thermal and electric change while expose by radiation with flash exposure technique. Series resistance (Rs) increase around 2 times and close to idea case after expose by radiation, the radiation will impact to bulk defect and reduce surface recombination. SRFE induce temperature on surface and deep into silicon bulk. The value of Rs increase with increase expose time. The changing of Rs becomes independent from radiation dose at high forward bias voltage.
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