Abstract
This paper mainly addresses the effects of the NH4Cl concentration and etching time on the surface texture of -oriented ZnO:Al films deposited by using direct-current pulse-magnetron reactive sputtering. A mechanism for the etching of the ZnO:Al films by NH4Cl is also proposed. The best surface texture was observed the same as it was etched for 15 min by using a 3.0 wt.% NH4Cl solution. The average reflectivity at wavelengths from 300 nm to 800 nm was sharply reduced to 4.607%. The etching with NH4Cl is closely related to the preferential orientation rather than the usual preferential orientation. The increased number of defects around the boundary is responsible for the surface texture and the blueshift of the absorption edge of the films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
