Abstract
Angle-integrated and angle-resolved (AR) photoelectron spectroscopy (PES) experiments were performed on GaAs(001) 2 × 4-Sb surfaces. The results of angle-integrated PES show that only Sb atoms lie on the GaAs surface and that they bond to Ga atoms. ARPES experiments revealed a surface state whose dispersion is very similar to the As dimer dangling bond surface state of As-terminated GaAs(001). These results suggested that Sb dimers terminate GaAs surfaces and bond to Ga atoms of the second top atomic layer.
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