Abstract
Physical vapour technique (PVT) is a versatile method to grow IIVI semiconductors. In present investigations, CdS crystals have been grown by this method using dual zone micro processor controlled horizontal furnace. CdS crystals grown in present case have been characterized by EDAX for stoichiometric conformation. The roughness of surface of grown CdS crystals has been studied in detail using optical microscopy, SEM and AFM. The surface topography study of as grown crystals has been carried out to understand the growth mechanism which was necessary for its application in electronic devices.
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