Abstract
We have studied the surface structures of GaSb, AlGaSb, and alternating GaSb/AlSb layers using 10-kV reflection electron diffraction. Above 540 °C, the Sb-stabilized surface (1×3) patterns change to c(8×2), a Ga-stabilized surface. Because the c(8×2) surface has been observed on all other III–V arsenides, phoshpides, and antimonides, it is now clear that the c(8×2) metal-stabilized surface is common to all III–V compounds, suggesting that bond pairing occurs on all III–V semiconductor surfaces and is a universal reconstruction mechanism. The smooth, sharp transitions observed in the growth of alternating GaSb and AlSb layers show that atomically smooth interfaces can be formed in this system. In contrast, for the AlAs overgrowth on GaAs, transient structures associated with a Ga surface layer can be observed.
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