Abstract
Surface structures of (NH 4) 2S x -treated GaAs(111)A, (111)B and (001) were investigated by S K-edge fluorescence yield X-ray absorption fine structure (XAFS) measurements using synchrotron radiation soft X-rays. The SGa bond length ordering on the three GaAs surfaces agrees well with XSW experimental results and theoretical calculations. The XAFS analyses confirm that the SGa bonds on the three GaAs surfaces have different bond lengths, supporting three kinds of adsorption sites on the three GaAs surfaces. However, the bond lengths on the GaAs(111)A and (111)B surfaces do not completely agree with those given by XSW experiments. This is considered to be caused by the surface roughness of the (NH 4) 2S x -treated GaAs, rather than surface relaxation of the GaAs substrate.
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