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Abstract
When a GaAs(001) surface with Se adsorbates was flash-heated under a low chemical potential condition, a 2 × 3 RHEED pattern, previously reported as an intermediate structure, remained even after the sample was cooled. The atomic structure observed by STM is in good agreement with the dimer model proposed to explain the chalcogen-passivated GaAs(001) surfaces. Se dimers were found to be buckled, but the 2 × -periodicity was maintained in the [ 1 10] direction, unlike the previously observed 4 × -structure forming the dimer row pairs. Some other structures, the axes of which are in directions different from [110], were also observed on the Se/GaAs(001) surface. The S-passivation effect was studied by measuring current-voltage properties for the S/GaAs(001) surface.
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