Abstract
The epitaxial structural development and surface reactions of barium metal with silicon have been studied as a function of surface coverage. BaSi{sub 2} is orthorhombic, and grows epitaxially on Si(001) and Si(111) for surface coverages greater than 1 monolayer (ML). From 0 to 1 ML a series of ordered surface structures develops that suggests a cubic Ba-Si compound. Reflection high energy electron diffraction (RHEED), Auger and x-ray photoelectron spectroscopy (XPS) data have been obtained in this thin film regime that support a chemical reaction and compound formation between barium and silicon for all barium coverages. In bulk form, at high pressures, BaSi{sub 2} can be stabilized into the cubic SrSi{sub 2} structure. We suggest that epitaxial strain at the silicon surface provides a mechanism for stabilizing the low-coverage precursors of the orthorhombic BaSi{sub 2}. 14 refs., 5 figs.
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