Abstract
Epitaxial growth modes for "two-step deposition" processes of metals on a Si(111) surface were investigated. Depth distributions of composition during the growth were analyzed by using RHEED-TRAXS (total reflection angle X-ray spectroscopy). We first made [Formula: see text]-(Ag, Au, Ga), [Formula: see text]-Sn and (4×1)-In structures, and then second metals (Ag, Au, Sn, Ga and In) were deposited on these surfaces at room temperature. Growth processes observed are classified into five growth modes: ordinary growth (O), alloying growth (A), substitution atom growth (S), particle formation growth mode (P) and floating atom growth (F). During the growth processes, we measured also surface conductivities which showed interesting behaviors. These results can be partly understood considering the growth modes, atomic arrangement, surface composition, Fermi level pinning and band bending, etc.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
