Abstract
(100) GaAs surfaces were terminated with sulfur atoms by (NH 4) 2S x treatment. Blocking measurements with medium energy ion scattering were performed to investigate the relaxation of the sulfur adsorbed layer. Sulfur atoms were found to be bonded with arsenic atoms at a bonding distance of 2.38 Å and reconstructed in a periodic structure of 1 × 1 after annealing at 200°C, while 2 × 1 reconstruction and bonding at a distance of 2.4 Å with gallium atoms were observed after annealing at 400°C. The distance between sulfur adatoms and underlying layers was found by MEIS blocking measurements to be 1.3 Å, having about an 8% relaxation compared to the GaAs lattice.
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