Abstract
Crystal growth of Gd 5Si 4, Gd 5Si 2Ge 2 and Gd 5Ge 4 was performed using the Czochralski method from the levitated melt. Single crystalline plates were obtained for all compounds. The Berg–Barrett topography revealed the existence of stress within the plates. The surface of the plates shows a regular system of lines or channels, which is independent of the growth steps and the stress structure. The auger electron spectroscopy investigation of that structure revealed the increase of gadolinium and oxygen contents in the area of lines, which had the width of about 2 μm. We suppose this concentration of impurities may take place along dislocations, which could be formed during the structural transition at high temperature.
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