Abstract
The structure and surface bonding configuration of InN layers grown by high-pressure chemical vapor deposition have been studied. Atomic hydrogen cleaning produced a contamination free surface. Low-energy electron diffraction yielded a 1×1 hexagonal pattern demonstrating a well-ordered c-plane surface. High-resolution electron energy loss spectra exhibited a Fuchs–Kliewer surface phonon and modes assigned to a surface N–H species. Assignments were confirmed by observation of isotopic shifts following atomic deuterium cleaning. No In–H species were observed, and since an N–H termination of the surface was observed, N-polarity indium nitride is indicated.
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