Abstract
The surface electron accumulation layer, surface structure, and surface chemical states of a-plane (nonpolar) and c-plane (polar) InN epitaxial films were investigated. Electrical measurements indicated electron accumulation layers on the surface of both the InN films. Angle-resolved x-ray photoelectron spectroscopy (XPS) measurements indicated a strong band bending at both surfaces, thus confirming the surface electron accumulation. Further XPS analysis of the near-surface chemical states indicated an In adlayer at the surface of c-plane InN and an oxygen adsorbed layer on the a-plane InN. These results suggest different ad-layers to cause the surface electron accumulation on c-plane and a-plane InN.
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