Surface Stoichiometry and Structural Properties of Copper‐Containing Sol–Gel SiO2 Films

Abstract

AbstractSummary: A study of the surface stoichiometry and structural properties of composite, copper‐containing, silica thin films (Cu:SiO2) is presented. The films are prepared on glass substrates by a sol–gel route. The coatings deposited by a dipping process are thermally treated under oxidative and subsequently reductive conditions up to 500 °C for metal nanoparticle formation. The coating structure, the nanoparticle formation, the copper diffusion, and the chemical composition of the surface are investigated using X‐ray diffraction (XRD), UV‐vis spectroscopy, heavy ion rutherford backscattering spectroscopy (HIRBS), and X‐ray photoelectron spectroscopy (XPS) as analytical methods.HIRBS spectrum, showing the Cu distribution of samples studied: a) as prepared, b) after heating under oxidative, and c) after heating under reductive conditions, using 12C3+ ions at 10 MeV.imageHIRBS spectrum, showing the Cu distribution of samples studied: a) as prepared, b) after heating under oxidative, and c) after heating under reductive conditions, using 12C3+ ions at 10 MeV.