Abstract
We studied the surface step ordering during molecular beam epitaxial growth on misoriented (110) InP substrates tilting toward the [001] direction using reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). During growth of InGaAs, we found that two types of surface steps (single and double monolayer steps) were ordered depending on the growth condition and on the terrace width. The AFM images of both InGaAs and InAlAs surfaces showed that the step edges were little undulated. We also grew InGaAs/InAlAs in-plane superlattices (IPSLs) using single monolayer step ordering. The photoluminescence spectrum had two peaks. The one closed to that of the InGaAs/InAlAs superlattice on the (001) InP substrate, but the other closed to InAlGaAs alloys.
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