Surface states on the n-InN-electrolyte interface

Abstract

Dependences of differential capacitance of the electrolyte-n-InN (0001) contact on the bias voltage are studied. Their analysis of the basis of a model similar to a model of the MIS structure shows that the energy spectrum of surface states of InN above the conduction band bottom can be represented by two, relatively narrow, bands of deep levels described by the Gaussian distribution. Parameters of these bands are as follows: the average energy counted from the conduction band bottom, ΔE1 ≈ 0.15 eV and ΔE2 ≈ 0.9 eV; and the mean-square deviation, ΔE1 ≈ 0.15–0.25 eV and ΔE2 ≈ 0.05–0.1 eV. The total density of states in the bands are (1–2.5) × 1012 and (0.2–4) × 1012 cm–2.