Surface states on GaAs(110)

Abstract

The electronic structure of the (110) surface of GaAs is recalculated using the relaxation geometry recently obtained from analyzing elastic low-energy electron diffraction intensity data and a self-consistent ab initio pseudopotential approach. Better agreement is found for the occupied surface states compared with photoemission data, giving support for the new structural model. The influence of convergence of the plane-wave expansion and relativistic effects on the surface states is also examined.