Abstract
Thin epitaxial layers of NaCl and KC1 have been grown on clean Ge(100) in UHV and investigated in situ. It is shown that good quality films are produced with thicknesses up to 5 nm with no observable charging up. The electronic structure is measured both by UPS and EELS. On clean surfaces the well known bulk transitions are reproduced. Surface states within the forbidden gaps are indentified after water adsorption with a filled band at 3.4 and 2.2 eV above the valence band edge for NaCl and KC1 respectively. With EELS also an empty surface state band is found.
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