Abstract
Surface conductivity and field effect mobility have been observed for silicon crystals (10 4 ohm-cm, p-type) cleaved in ultra high vacuum. By special techniques the influence of the uncleaved surfaces was eliminated. The clean surface was found to be weakly p-type ( Δσ = 4.2 ± 1.3) × 10 −7 ohm −1). The density of surface states is very high (S E = 10 14eV −1 cm −2) and its total number exceeds 10 13cm −2.
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