Surface States of Silicon-Silicon Dioxide Interface Grown by Vapor Deposition

Abstract

To search the method of obtaining Si-SiO2 interface with lower surface state density, the surface state density of MOS structure produced by gas etching or epitaxial growth of Si and successive gas deposition of SiO2 were measure. The method of determining the surface state density was re-examined and confirmed. The surface state densities of the gas deposited samples were found to be smaller than those of the thermally grown samples. The smallest surface state density of gas deposited sample was of the order of 1010/cm2 in the frequency range between 1 kc/s and 1 mc/s. The flat band charge NFB did not depend sensitively on the way the SiO2 was made and depended on the treatment after the SiO2 was deposited.