Abstract
Equilibrium conductivity and photoconductivity (PC) of MgxCd1−xTe (T = 300 K) and the PC and photomagnetic effect (PME) of CdxHg1−xTe (T = 77 K) solid solutions (SS) before and after irradiation with ruby laser pulses in the Q-switched mode are analyzed. Laser irradiation is shown to increase the forbidden gap width and to change the stoichiometric composition in the subsurface region of the SS. In n-type MgxCd1−xTe crystals a donor-enriched layer is formed and a Te film appears on the surface; in n-type CdxHg1−xTe crystals a conductivity-type inversion occurs and a built-in p–n junction arises under the action of laser emission pulses. [Russian Text Ignored].
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