Abstract
Conductance and capacitance measurements have been used to investigate the interface properties of MOS capacitors formed by depositing an insulating layer of SiO 2 on n-type GaAs. The surface potential as a function of applied bias is evaluated using results of high and low frequency capacitance measurements and the two methods are found to yield roughly similar results. The interface state density evaluated from the conductance and capacitance measurements is found to peak near the center of the band gap and also near the conduction band edge. Plots of conductance vs frequency indicate the presence of both fast and slow interface states in these materials.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
