Abstract
We use total yield photoelectron spectroscopy to measure the density of occupied states in undoped and lightly boron-doped a-Si:H. We observe a large density of states in the gap of undoped a-Si:H, which we ascribe to near surface defect states. Incorporation of boron removes these states and allows an unobstructed view of the valence band tail. This is shown to be exponential over more than three orders of magnitude in the density of states with an inverse logarithmic slope of 45 meV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
