Surface state dispersion on the β-SiC(111)-(3 × 3) surface

Abstract

The electronic structure of the Si-terminated β-SiC(111)-(3 × 3) surface has been studied using angle-resolved ultraviolet photoemission spectroscopy. A semiconducting surface occupation with no emission from states at the Fermi level is observed. Two surface state bands are identified in the fundamental gap, centered at 0.65 eV and 1.4 eV binding energy, respectively, 1.35 eV and 0.6 eV above the valence band maximum. Their dispersion is measured along the high symmetry lines of the surface Brillouin zone.