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Abstract
A method for patterning organic single-crystal transistor arrays via surface selective deposition is presented. Solvent-vapor annealing is applied for the formation of organic crystals under ambient conditions. The devices are fabricated with a dual-gate structure, which allows the investigation of device performances of bottom-gate/top-contact (BG/TC) and top-gate/top-contact (TG/TC) structures based on the same crystals. The resulting BG/TC devices exhibit the field-effect mobility (μFET) up to 3.5 cm2/Vs. And μ FET is influenced by the contact resistance, resulting in large variation in device performance. On the other hand, TG/TC structure exhibits better performance with smaller variation. The highest μ FET is 7.4 cm2/Vs.
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