Abstract
AES and LEED are applied to the study of silicon surface segregation on Fe−3wt%Si single crystals between 400 and 900°C. The variations of the Si coverage with time at a given temperature or with the temperature at equilibrium show a strong orientation dependence. For the (100) orientation, the diffusivity and segregation enthalpy of silicon on iron could be derived from the measurements. Lateral interactions between segregated atoms are better observed in the presence of a third element. The study of the Fe-Si-C ternary system thus confirmed the weakness of the Si-Si lateral interactions. It also showed that the repelling of Si by C on the surface is mainly due to a site competition reaction, whereby the strong Si-C repulsive interaction plays a minor role.
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