Abstract
AbstractThe surface segregation of Mg and Si dopant species in GaN films has been investigated by means of combined X‐ray photoemission spectroscopy and microscopy. For both species, a segregation tendency was detected. Comparing Mg doped samples before and after Ar ion sputtering, a Mg surface enrichment is concluded on that extends at least over several atomic layers. For Si doped films, the formation of facetted cracks with threefold symmetry was observed. The Si surface concentration was found to be enhanced at the facets of these cracks by a factor of 2.5 with respect to the c ‐plane surface. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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