Abstract
The two-site exchange model for surface segregation is extended to take account of the site-blocking action of foreign atoms on the surface, either those applied deliberately as a surfactant, or those occurring as reaction products of the growth process. The model is applied to segregation of Ge during the growth of a Si film on a SiGe surface by gas-source molecular beam epitaxy, using Si 2H 6 as the Si precursor. It is shown how the reaction product, hydrogen, which is adsorbed on the growing surface, acts to reduce the Gibbs energy of segregation. The trends for the blocked-site concentration by hydrogen as a function of temperature and Si 2H 6 flux derived from the Ge segregation data show excellent agreement with reported results of surface hydrogen coverage obtained by completely different techniques.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
