Abstract
An expression has been derived for the relaxation time due to surface roughness scattering of a one dimensional electron gas (1DEG) in a narrow channel FET. The bumps in the interface are assumed to have Gaussian autocorrelation. The values of mobility at low temperature are calculated for the 1DEG in GaAs HEMTs for different 1D densities and are compared with the values limited by phonon and impurity scattering. For moderate values of 1D density, surface roughness scattering is as important as the impurity scattering. A rough estimate of the effect of screening on the values of mobilities is also made.
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