Abstract
We describe the reactive ion etching of Ti:LiNbO3 single crystal in gas mixtures containing C3F8 and Ar using neutral loop discharge plasma. The surface roughness of etched Ti:LiNbO3 surface under various gas mixture conditions was analyzed by using atomic force microscopy and scanning electron microscopy. The annealing effect of an etched ridge structure waveguides was also observed.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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