Abstract
The investigation of the mechanism of mechanical polishing of optoelectronic components made of crystalline materials has demonstrated that the machined surface roughness parameters grow linearly with increasing most probable values of debris particle size and surface area, unit cell volume, and surface area of the crystal plane machined. The surface roughness parameters are shown to be inversely proportional to the energy spent for the debris particle formation. The relative surface roughness of the polished silicon carbide, gallium nitride, aluminum nitride, and sapphire workpieces is represented by the following ratio: 0.68: 0.67: 0.63: 1.00.
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